SIMS investigation of Gex(4H-SiC)1-x solid solutions synthesized by Ge-ion implantation up to x=0.2


SIMS investigation of Gex(4H-SiC)1-x solid solutions synthesized by Ge-ion implantation up to x=0.2

Peyre, H.; Pezoldt, J.; Voelskow, M.; Skorupa, W.; Camassel, J.

Ge-ion implantation in SiC is of interest for fundamental damage studies and hetero-junction device applications. For instance, a thin Ge-implanted layer has already been used as base for hetero-structure bipolar transistors [5]. Germanium is also a widely used solvent in VLS (Vapor-Liquid-Solid) growth technology and shedding more light on the incorporation of Ge in the SiC lattice is of interest [6]. Recently, high dose / high temperature ion-implantations have been done in 4H-SiC samples which, when investigated by RBS (Rutherford Backscattering Spectroscopy) techniques, suggested that up to 50% of the initial dose could be lost for targeted concentrations in the range of 10 to 20%. In this work we present a comparative investigation of the Ge concentration distributions carried out by SIMS and RBS and highlight the effects affecting the depth distribution and measurement results.

Keywords: SiC; Ge Ion implantation; SIMS; RBS

  • Lecture (Conference)
    7th European Conference on Silicon Carbide and Related Materials, 07.-11.09.2008, Barcelona, Spain
  • Materials Science Forum 615-617(2009), 465-468

Permalink: https://www.hzdr.de/publications/Publ-11724
Publ.-Id: 11724