Mn - implanted, polycrystalline indium tin oxide and indium oxide films


Mn - implanted, polycrystalline indium tin oxide and indium oxide films

Scarlat, C.; Vinnichenko, M.; Xu, Q.; Bürger, D.; Zhou, S.; Kolitsch, A.; Grenzer, J.; Helm, M.; Schmidt, H.

Polycrystalline conducting, ca. 250 nm thick indium tin oxide (ITO) and indium oxide (IO) films grown on SiO2/Si substrates using reactive magnetron sputtering, have been implanted with 1 and 5 at% of Mn at 120 keV, 60 keV and 20 keV, followed by annealing in nitrogen for 10 s at 650oC (rapid thermal annealing, RTA) or in vacuum for 2 h at 200oC (vacuum thermal annealing, VTA). The effect of the post-growth treatment on the structural, electrical, magnetic, and optical properties has been studied. The roughness of implanted films ranges between 3 and 15 nm and XRD measurements revealed a polycrystalline structure. A smaller negative magnetoresistance (MR) has been probed on unimplanted ITO and IO films. By magnetotransport measurements at 5 K and 3 T, the positive MR of the IO film implanted with 1 at% Mn, VTA, and an electron concentration of 1.9×1020 cm-3 amounts to 3%. Spectroscopic ellipsometry has been used to prove the existence of midgap electronic states in the Mn implanted ITO and IO films reducing the transmittance below 80%.

Keywords: diluted magnetic semiconductor; ITO; magnetoresistance; optical constants

  • Poster
    IBMM 2008 - 16th International Conference on Ion Beam Modification of Materials, 31.08.-05.09.2008, Dresden, Germany
  • Nuclear Instruments and Methods in Physics Research B 267(2009)8-9, 1616-1619
    DOI: 10.1016/j.nimb.2009.01.158
    Cited 3 times in Scopus

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Publ.-Id: 11772