Vacancy-type defects in 6H–silicon carbide induced by He-implantation: a positron annihilation spectroscopy approach


Vacancy-type defects in 6H–silicon carbide induced by He-implantation: a positron annihilation spectroscopy approach

Zhu, C. Y.; Ling, C. C.; Brauer, G.; Anwand, W.; Skorupa, W.

Six-fold helium ion implantation was carried out on nitrogen doped n-type 6H–SiC epi samples. A box-shaped He-implantation profile and damage region was thus introduced. Vacancy-type defects in the implanted region were studied by positron annihilation spectroscopy using a monoenergetic positron beam. The average size of the vacancy-type defect detected in the as-He-implanted sample was the divacancy (V2). Thermal annealing had the effect of shrinking the defective region. Annealing at temperatures lower than 900 ◦C had the effect of removing vacancy-type defects in the defective region. While the annealing temperature is above 900 ◦C, the size of the vacancy-type defects in the defective region increased with annealing temperature. At the annealing temperature of 1600 ◦C, the defectiveregion reduced to ∼100 nm and the vacancy-type defects within the region agglomerated to clusters having an average size of 14 V2.

  • Journal of Physics D: Applied Physics 41(2008), 195304

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Publ.-Id: 11789