The complex dynamics between the Eu2+ and Eu3+ electroluminescence of Eu-implanted MOS light emitting devices


The complex dynamics between the Eu2+ and Eu3+ electroluminescence of Eu-implanted MOS light emitting devices

Rebohle, L.; Lehmann, J.; Prucnal, S.; Nazarov, A.; Tyagulskii, I.; Skorupa, W.; Helm, M.; Biskupek, J.; Kaiser, U.

Si-based light emitters were fabricated by ion implantation of Eu into a thermally grown oxide layer on Si followed by a thermal treatment and the deposition of a SiON and an indium tin oxide layer. The Eu ions were implanted in such a way that the maximum Eu concentration varies between 0.1 and 6 %. Flash lamp annealing, rapid thermal annealing and furnace annealing at temperatures between 900 and 1100°C were applied in order to activate the Eu-related luminescence centres. The electroluminescence (EL) spectrum of the Eu-implanted SiO2 layers shows a relatively sharp red EL line centered at 618 nm and a broad EL band in the blue-green spectral region which is usually assigned to the light emission of Eu3+ and Eu2+ ions, respectively. In this work we will show that the ratio between blue and red EL shows a complex dependence on the Eu concentration, the annealing time and the annealing temperature, but that some general tendencies can be identified, too. So the blue EL assigned to Eu2+ ions will dominate for high concentrations and high annealing temperatures. The dynamics of Eu2+ and Eu3+ is discussed in the framework of charge injection, charge transport and the EL mechanism which is based on the direct excitation of Eu ions by hot ballistic electrons.

Keywords: Europium; Electroluminescence; Si-based light emission; MOS

  • Lecture (Conference)
    E-MRS 2008 Spring Meeting, 26.-30.05.2008, Strasbourg, Frankreich

Permalink: https://www.hzdr.de/publications/Publ-11821
Publ.-Id: 11821