n-type diamond produced by MeV lithium implantation in channeling direction


n-type diamond produced by MeV lithium implantation in channeling direction

Chernyshev, V.; Meijer, J.; Grambole, D.; Herrmann, F.; Dagkaldiran, U.; Wieck, A.

Natural diamond implanted with lithium ions at high energy (E = 2MeV) in axial channeling direction is investigated. Hall measurements show n-type conductivity caused by the lithium implantation. These measurements show two regions in the Arrhenius plot for both resistance and charge carrier concentration. The resistance measurement in the low and high temperature range revealed the activation energies of E-Rlow = 406meV and E-Rhigh = 105meV. The slope for the charge carrier concentration shows a more complex behaviour. After annealing, the n-type conductivity caused by implanted lithium disappears.

  • Diamond and Related Materials 17(2008)11, 1933-1935

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Publ.-Id: 11977