Fabrication of ultra-shallow p-n junctions by ion beam processing


Fabrication of ultra-shallow p-n junctions by ion beam processing

Zier, M.

Ultra-shallow p-n junctions in silicon play an important role in semiconductor industry, for example as source-drain extensions in highly integrated MOSFETs. The present talk shows their application as piezo-resistive bending sensors in massively parallel AFM arrays.
Difficulties in fabrication of ultra-shallow p-n junctions will be discussed and potential solutions will be given. To obtain ultra-shallow junctions several methods can be employed: pre-amorphisation, low energy ion implantation or the formation of a region with an enhanced vacancy concentration near the sample surface by high energy Si implantation. The activation of the dopant can be accomplished either by rapid thermal annealing or flash lamp annealing. Finally, the characterisation of the ultra-shallow doped layers using electrical and SIMS measurements will be shown.

Keywords: ion beam modification; ion implantation; ultra-shallow junction

  • Lecture (others)
    Materials Science Seminar, 29.04.2008, Dresden, Deutschland

Permalink: https://www.hzdr.de/publications/Publ-12180
Publ.-Id: 12180