Rare Earth Ion Beam Processing for Silicon Photonics


Rare Earth Ion Beam Processing for Silicon Photonics

Skorupa, W.; Rebohle, L.; Prucnal, S.; Cherkouk, C.; Helm, M.

Combining silicon-based electronic circuits with optoelectronic functionality is one of the key challenges for the future semiconductor technology. Such work must not only be devoted to the “telecommunication” wavelength of 1.54 µm because there are much more applications requiring light sources from the UV to IR wavelength range. In our work we employed ion beam processing to embed different rare earth (RE) luminescent centers (Gd, Ce, Tm, Tb, Eu, Er) into the silicon dioxide layer of purpose-designed Metal-Oxide-Silicon-based Light Emitting Devices (MOSLEDs) with advanced electrical performance. Efficient electroluminescence was obtained from UV to infrared with a transparent top electrode made of indium-tin oxide. Several developments for improving the device stability will be proposed related to charge compensation and the elimination of defects in SiO2. The electrical and electroluminescence properties of these devices are discussed and evaluated in respect of possible applications for biosensing applications. As an example our recent effort to detect estrogens in drinking water will be discussed.

  • Invited lecture (Conferences)
    2008 MRS Fall Meeting, Symposium D: Rare-Earth Doping of Advanced Materials for Photonic Applications, 01.-05.12.2008, Boston MA, USA

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Publ.-Id: 12201