Growth and Electrical Properties of the (Si/Ge)-on-Insulator Structures Formed by Ion Implantation and Subsequent Hydrogen-Assisted Transfer


Growth and Electrical Properties of the (Si/Ge)-on-Insulator Structures Formed by Ion Implantation and Subsequent Hydrogen-Assisted Transfer

Tyschenko, I. E.; Voelskow, M.; Cherkov, A. G.; Popov, V. P.

Systematic features of endotaxial growth of intermediate germanium layers at the bonding interface
in the silicon-on-insulator structure consisting of buried SiO2 layer implanted with Ge+ ions are studied in relation to the annealing temperature. On the basis of the results for high-resolution electron microscopy and thermodynamic analysis of the Si/Ge/SiO2 system it is assumed that the endotaxial growth of the Ge layer occurs via formation of a melt due to enhanced segregation and accumulation of Ge at the Si/SiO
interface. Effect of germanium at the bonding interface on the Hall mobility of holes in silicon layers with nanometer-scale thickness is studied. It is found that the structures including the top silicon layer with the thickness 3–20 nm and incorporating germanium feature the hole mobility that exceeds by a factor of 2–3 the hole mobility in corresponding Ge-free silicon-on-insulator structures.

Keywords: Si/Ge; Electrical Properties; Ion Implantation; Hydrogen Transfer

  • Semiconductors 43(2009)1, 52-56
  • Fizika i Tekhnika Poluprovodnikov 43(2009)1, 58-63

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Publ.-Id: 12357