Local setting of magnetic anisotropy in FeCoSiB thin films by means of indirect ion implantation


Local setting of magnetic anisotropy in FeCoSiB thin films by means of indirect ion implantation

Martin, N.; McCord, J.; Gerber, A.; Strache, T.; Gemming, T.; Mönch, I.; Schäfer, R.; Fassbender, J.; Quandt, E.; Schultz, L.

The magnetic anisotropy direction and strength of amorphous FeCoSiB thin films was modified locally by masked ion implantation without alteration of the magnetic material’s structure and the intrinsic magnetic properties of the ferromagnetic film. The changes were introduced by local ion implantation in a SiO2 covering and protection layer, inducing additional stress-induced magnetic anisotropy to the magnetostrictive ferromagnetic layer. Hybrid hysteresis curves combining switching and rotational processes were measured and the underlying local variation of magnetic anisotropy was confirmed by magnetic domain observations. A good agreement between the calculated stress distribution and the experimentally obtained magnetic data was found. The described indirect method, relying purely on magneto-elastics, introduces a new path to the creation or alteration of magnetic properties subsequent to magnetic film preparation in structured magnetic samples without introducing any structural changes to the ferromagnetic layers.

Keywords: magnetism; ion irradiation; amorphous films; strain; stress; patterning; anisotropy

  • Lecture (Conference)
    DPG Frühjahrstagung der Sektion Kondensierte Materie (SKM) 2009, 22.-27.03.2009, Dresden, Deutschland

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Publ.-Id: 12560