Extraction of nitride trap density distribution in SONOS structures based on an advanced thermal emission model


Extraction of nitride trap density distribution in SONOS structures based on an advanced thermal emission model

Bernert, K.; Schönlebe, J.; Oestreich, C.; Mikolajick, T.

As a result of continued scaling and the emphasis on low power and low voltage operation, silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory has received more attention recently. In this talk we investigate the charge decay characteristics of SONOS devices at elevated temperatures. Based on the thermal emission model as the dominant charge loss mechanism, the trap density energy distribution is determined. Furthermore we present an advanced model which includes the influence of subsequent tunneling through the bottom oxide after thermal excitation in the conduction band of the nitride.

Keywords: charge trapping memory; charge decay characteristics; thermal emission

  • Lecture (Conference)
    DPG Frühjahrstagung der Sektion Kondensierte Materie (SKM) 2009, 26.03.2009, Dresden, Deutschland

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Publ.-Id: 12589