Photoluminescensia plenok Si3N4 implantirovannich ionami Ge+ i Ar+

Tyschenko, I. E.; Volodin, V. A.; Rebohle, L.; Voelskow, M.; Skorupa, W.

Photoluminescensia plenok Si3N4 implantirovannich ionami Ge+ i Ar+

Tyschenko, I. E.; Volodin, V. A.; Rebohle, L.; Voelskow, M.; Skorupa, W.

Spektri emissii i wosbuschdenia photoluminescencii pri komnatnoi temperature plenok Si3N4 implantirovannich plenok Ge+ i Ar+, issledovanui v savisimosti ot dosui ionov i temperaturui posledujuschego otschiga.

Keywords: photoluminescence; Si3N4; ion implantation; annealing

Fizika i Tekhnika Poluprovodnikov 33(1999)5, 559-566

Permalink: https://www.hzdr.de/publications/Publ-12625