Ion sputtering of Si surfaces at normal incidence: roughening versus smoothening


Ion sputtering of Si surfaces at normal incidence: roughening versus smoothening

Zhou, J.; Facsko, S.; Keller, A.; Möller, W.

Ion sputtering of Si surfaces at normal incidence has been studied with and without metal codeposition. Metal impurities are necessary for dot pattern formation. Normal incidence ion sputtering of Si without metal codeposition has a smoothening instead of a roughening effect. The smoothening effect is effected by the presence of metal impurities and differs from „classical“ relaxation mechanisms where the decay coefficient has a power law dependence on the wavenumber.

  • Lecture (others)
    Treffen der DFG-Forschergruppe 845 "Selbstorganisierte Nanostrukturen durch niederenergetische Ionenstrahlerosion", 31.3.2009, Köln, Deutschland

Permalink: https://www.hzdr.de/publications/Publ-12717
Publ.-Id: 12717