Defect engineering in the MOSLED structure by the ion implantation


Defect engineering in the MOSLED structure by the ion implantation

Prucnal, S.; Wójtowicz, A.; Pyszniak, K.; Drozdziel, A.; Zuk, J.; Turek, M.; Rebohle, L.; Skorupa, W.

When amorphous silica is bombarded with energetic ions, various types of defects are created as a consequence of ion-solid interaction (peroxy radicals POR, oxygen deficient centres ODC, non-bridging oxygen hole centres NBOHC, E’-centres, etc.). The intensity of the electroluminescence from oxygen deficiency centres at 2.7 eV, non-bridging oxygen hole centres at 1.9 eV and defect centres with emission at 2.07 eV can be easily modified by the ion implantation of the different elements (H, N, O) into the full processed MOSLED structure. Nitrogen implanted into the SiO2:Gd layer reduces the concentration of the ODC and NBOHC while the doping of the oxygen increases the EL intensity observed from POR defect and NBOHC. Moreover, after oxygen or hydrogen implantation into the SiO2:Ge structure fourfold or fifth fold increase of the germanium related EL intensity was observed.

Keywords: MOSLED; ion implantation; defect engineering; electroluminescence

  • Nuclear Instruments and Methods in Physics Research B 267(2009), 1311-1313

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Publ.-Id: 12728