Determination of size and density of embedded nanocrystals in SiO2 by scanning force microscopy using a tomographic approach


Determination of size and density of embedded nanocrystals in SiO2 by scanning force microscopy using a tomographic approach

Beyer, R.; von Borany, J.

In this study we used scanning force microscopy in order to determine size and density of Ge nanocrystals embedded in a 100 nm SiO2 layer. Wet chemical etching was utilized in order to uncover the clusters. Sample preparation was accomplished by Ge+ implantation with 70 keV with doses of 1e16cm-2 and 3e16cm-2. Annealing was performed in N2 ambient at 1050°C for 30 or 120 s, respectively. The elemental distribution before and after the annealing was examined by Rutherford backscattering spectrometry. For the surface analysis AFM images in scanning areas of 1x1 μm² and 500x500 nm² were recorded with a DI Nanoscope III. Through a variation of the etching time a tomographic information about the nanocrystal properties was obtained. The density of the nanoparticles exhibits a maximum of 1e11cm-2 for the highly implanted samples, and of 4e10cm-2 for the samples with lower implantation dose. The samples were also analyzed by transmission electron microscopy (TEM). Results and the unequal preparative effort were compared and discussed.

Keywords: Ge nanocrystals; surface analysis

  • Poster
    15. Tagung Festkörperanalytik, 12.-16.07.2009, Chemnitz, Germany

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Publ.-Id: 12988