Cyclotron resonance absorption of 2D holes in strained InGaAs/GaAs quantum wells under high magnetic fields
Cyclotron resonance absorption of 2D holes in strained InGaAs/GaAs quantum wells under high magnetic fields
Drachenko, O.; Winnerl, S.; Schneider, H.; Helm, M.; Wosnitza, J.; Kozlov, D.; Maremyanin, K.; Ikonnikov, A.; Gavrilenko, V.; Zvonkov, B.; Goiran, M.; Leotin, J.; Fasching, G.
We report a systematic study of the cyclotron resonance absorption of two-dimensional holes in strained InGaAs/GaAs quantum wells under high magnetic fields up to 60 Tesla. The energies of the CR transitions are traced as a function of magnetic field. A remarkable CR line splitting was evidenced when the resonant field exceeds 20 T. We analyze our data with a 4x4 Luttinger Hamiltonian including strain and QW potentials using two different methods to calculate Luttinger parameters for ternary alloys.
Keywords: Cyclotron resonance; effective mass; strain; quantum wells; InGaAs
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Poster
International Conference on Research in High Magnetic Fields, 22.-25.07.2009, Dresden, Germany
Permalink: https://www.hzdr.de/publications/Publ-13005
Publ.-Id: 13005