Quantitative dopant profiling in semiconductors: A Kelvin probe force microscopy model
Quantitative dopant profiling in semiconductors: A Kelvin probe force microscopy model
Baumgart, C.; Helm, M.; Schmidt, H.
Kelvin probe force microscopy (KPFM) is used to investigate the electrostatic force between a conductive probe and nanostructured Si with shallow or buried selectively doped regions under ambient conditions. A unique KPFM model correlates the measured Kelvin bias with the calculated Fermi energy, and thus allows quantitative dopant profiling. We show that due to an asymmetric electric-dipole formation at the semiconductor surface the measured Kelvin bias is related with the difference between Fermi energy and respective band edge, and independent of the probe potential.
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Physical Review B 80(2009), 085305
DOI: 10.1103/PhysRevB.80.085305
Cited 43 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-13090
Publ.-Id: 13090