Arsenic doped p-type zinc oxide films grown by radio frequency magnetron sputtering


Arsenic doped p-type zinc oxide films grown by radio frequency magnetron sputtering

Fan, J. C.; Zhu, C. Y.; Fung, S.; Zhong, Y. C.; Wong, K. S.; Xie, Z.; Brauer, G.; Anwand, W.; Skorupa, W.; To, C. T.; Yang, B.; Beling, C. D.; Ling, C. C.

As-doped ZnO films were grown by the radio frequency magnetron sputtering method As the substrate temperature during growth was raised above ~400°C, the films changed from n-type to p-type. Hole concentration and mobility of ~6x10^17 cm^-3 and ~6 cm^2 V^-1 s^-1were achieved. The ZnO films were studied by secondary mass spectroscopy, x-ray photoelectron spectroscopy (XPS), low temperature photoluminescence (PL), and positron annihilation spectroscopy (PAS). The results were consistent with the As/Zn-2V/Zn shallow acceptor model proposed by Limpijumnong et al. [Phys. Rev. Lett. 92 155504 (2004)]. The results of the XPS, PL, PAS, and thermal studies lead us to suggest a comprehensive picture of As-related shallow acceptor formation.

  • Journal of Applied Physics 106(2009), 073709-1-073709-6

Permalink: https://www.hzdr.de/publications/Publ-13266
Publ.-Id: 13266