Room temperature transparent ferromagnetism in 200 keV Ni2+ ion implanted PLD grown ZnO/sapphire film


Room temperature transparent ferromagnetism in 200 keV Ni2+ ion implanted PLD grown ZnO/sapphire film

Pandey, B.; Ghosh, S.; Srivastava, P.; Kumar, P.; Kanjilal, D.; Zhou, S.; Schmidt, H.

Intrinsic ferromagnetism at room temperature has been observed in ZnO/sapphire films by implantation of 200 keV Ni2+ ions with fluences 6 × 1015, 8 × 1015, 1 × 1016 and 2 × 1016 ions/cm2. Crystalline phases are identified by glancing angle X-ray diffraction (GAXRD), which shows no extra phase in the implanted films. Highest saturation magnetization (Ms) is observed in the film implanted with the fluence of 8 × 1015 ions/cm2 as examined by SQUID magnetometry. This film has almost 80% transmittance across visible wavelength range and hence a potential candidate of transparent ferromagnetic semiconductor [TMS]. Defect like oxygen vacancies in the films are studied by X-ray photoelectron spectroscopy (XPS). Ferromagnetism of the films is explained on the basis of bound magnetic polaron (BMP) model.

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Publ.-Id: 13491