MeV carbon implantation into silicon: microstructure and electrical properties


MeV carbon implantation into silicon: microstructure and electrical properties

Skorupa, W.; Kögler, R.; Voelskow, M.; Schmalz, K.; Morgenstern, G.; Gaworzewski, P.

Doping effects after carbon implantation at 0 .33 and 10 MeV were investigated at silicon wafers with different oxygen content. No distinct influence of the oxygen concentration on the carbon induced doping effect was found for rapid thermal annealing at 1250°C for 30 s whereas for furnace annealing at 1000°C the doping effect is higher for Czochralski-grown silicon wafers with their higher oxygen content. The gettering efficiency of a buried carbon implanted layer for additionally introduced iron atoms was investigated by deep level transient spectroscopy. Gettering sets in at a dose of 10E14 cm2 and is completed for a carbon dose of 1E16 cm2 for iron doses up to 1E13 cm2. The microstructure of such a buried layer is characterised by a narrow band of dark contrast containing mainly stacking faults of the extrinsic type .

Keywords: MeV ion implantation; DLTS

  • Nuclear Instruments and Methods in Physics Research B 68(1992)1-4, 408-412

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Publ.-Id: 13746