Scanning Probe Microscopy-based Characterization of ZnO Nanorods


Scanning Probe Microscopy-based Characterization of ZnO Nanorods

Teichert, C.; Hou, Y.; Beinik, I.; Chen, X.; Hsu, Y. F.; Djurisic, A. B.; Anwand, W.; Brauer, G.

Abstract-We apply scanning probe microscopy (SPM) to study the morphology and electrical properties of vertical zinc oxide nanorods grown by hydrothermal methods on silicon substrates. It is demonstrated that – against the intuition – SPM techniques can indeed be used to study such fragile high-aspect ratio semiconductor nanorods. Atomic-force microscopy (AFM) operating in tapping mode yields - via the analysis of the height histograms calculated from AFM images - easy access to the height fluctuations in the nanorod ensemble. High-resolution AFM images reveal the three-dimensional shape of the nanorods including transition facets between the (0001) top terrace and the {10-10} side facets. Further, we were able to acquire currentvoltage curves of individual nanorods by conductive atomic force microscopy (CAFM) operating in contact mode.

  • Lecture (Conference)
    IEEE International nanoElectronics Conference (INEC 2010), 03.-08.01.2010, Hong Kong, China

Permalink: https://www.hzdr.de/publications/Publ-13774
Publ.-Id: 13774