Effect of Gallium Doping on Superconductivity in Germanium


Effect of Gallium Doping on Superconductivity in Germanium

Skrotzki, R.; Herrmannsdörfer, T.; Heera, V.; Ignatchik, O.; Uhlarz, M.; Mücklich, A.; Posselt, M.; Reuther, H.; Schmidt, B.; Heinig, K.-H.; Skorupa, W.; Voelskow, M.; Wündisch, C.; Fiedler, J.; Helm, M.; Wosnitza, J.

We report recent discoveries of superconductivity in Ga-doped germanium fabricated by ion implantation and subsequent flash-lamp or oven annealing. Tuning the preparation parameters allows for varying both charge-carrier and Ga concentration in the resulting roughly 100 nm thin nano- or single-crystalline layers. Transport measurements on systematically prepared samples reveal that besides a needed charge-carrier concentration of more than 0.4 atom%, superconductivity occurs to be sensitive on the implanted Ga content which may also be attributed to a change in the phonon properties. Onset transition temperatures up to 1.4 K have been found for almost 10 atom% Ga. Further, we observe in-plane critical fields exceeding 1 T and being close to the Pauli-Clogston limit. An exceptionally low Cooper-pair density of around 1015 cm−3 turns out the extreme type-II character of superconductivity. Finally, our work adds to our previous report [1] and may help to understand superconductivity in doped elemental semiconductors in general.

  • Lecture (Conference)
    DPG Frühjahrstagung der Sektion Kondensierte Materie (SKM) 2010, 22.-26.03.2010, Regensburg, Deutschland

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Publ.-Id: 13954