Magnetic Anisotropy of Thin Magnetic Films on Nanometer Scale Silicon Ripples
Magnetic Anisotropy of Thin Magnetic Films on Nanometer Scale Silicon Ripples
Ball, D.; Liedke, M. O.; Lenz, K.; Fritzsche, M.; Yilgin, R.; Keller, A.; Ranjan, M.; Facsko, S.; Fassbender, J.
Ion beam erosion techniques allow for the creation of well-ordered substrate ripples with nanometer periodicity. Moreover, the periodicity can be tuned by changing the ion beam energy over a wide range [1]. The ripple pattern is directly transferred into films grown on these substrates. This offers the possibility of tailoring the magnetic properties by inducing additional magnetic anisotropy due to the structural modifications.
We study the influence of rippled vs. flat Si substrates for 10 nm thin Fe and Co films, as well as technologically relevant Heusler alloys (Fe3Si and Co2FexMn1-xSi). The magnetic anisotropy is measured by frequency and angle dependent vector network analyzer ferromagnetic resonance. The ripple morphology of the magnetic layers induces a strong uniaxial magnetic anisotropy.
Keywords: Vector network analyzer ferromagnetic resonance; Co2FexMn1-xSi; Fe3Si; rippled morphology
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Nanofair, 06.-07.07.2010, Dresden, Germany
Permalink: https://www.hzdr.de/publications/Publ-14707
Publ.-Id: 14707