Structural characterization of buried superconducting Ga rich films in Si


Structural characterization of buried superconducting Ga rich films in Si

Fiedler, J.; Heera, V.; Skrotzki, R.; Herrmannsdörfer, T.; Voelskow, M.; Mücklich, A.; Schmidt, B.; Skorupa, W.; Gobsch, G.; Helm, M.; Wosnitza, J.

Recently it has been shown that heavily p-doped group-IV semiconductors such as diamond, silicon and germanium can become superconducting at low temperatures. Here, we present a study of Ga-implanted Si that becomes superconducting due to precipitation after annealing. Ion implantation allows introducing a high Ga dose (4E16cm-2) in Si that leads to peak concentrations far beyond the solid solubility limit. Rapid thermal annealing (RTA) causes redistribution of the Ga and re-crystallization of the amorphous implanted Si layer. After annealing at temperatures up to 850°C the implanted layers are polycrystalline and contain Ga-rich precipitates. Structural investigations by means of RBS/C measurements and TEM demonstrate a high density of precipitates at the interface of a protective SiO2 layer and the silicon substrate. At optimized annealing conditions (600-700°C) such samples become superconducting with critical temperatures up to 7 K [1].
[1] Skrotzki R. et al. , Appl. Phys. Lett. 97 (2010) 192505

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