Defect characterization of Er implanted, Ge-rich SiO2 layers using slow positron implantation spectroscopy


Defect characterization of Er implanted, Ge-rich SiO2 layers using slow positron implantation spectroscopy

Anwand, W.; Kanjilal, A.; Wagner, A.; Brauer, G.; Cowan, T.; Rebohle, L.; Cherkouk, C.; Skorupa, W.

The electroluminescence properties of rare earth–doped SiO2 layers are known to deteriorate markedly at room temperature due to rare earth clustering. The key challenge is therefore to probe ongoing processes at microscopic level and the subsequent impact on the optical response with increasing rare earth concentration. Positron annihilation spectroscopy, especially Doppler Broadening Spectroscopy, was applied in order to clarify the structural changes in Ge and Er doped SiO2 layers in dependence on the Er concentration. The obtained results will be compared with Transmission Electron Microscopy investigations and with conclusions in recently published papers. Finally, an outlook about future applications of luminescent SiO2 will be given.

Keywords: Ge; Er doped SiO2; electro-luminescence; positron annihilation spectroscopy

  • Invited lecture (Conferences)
    International Workshop on Advanced Positron Beam Technology for Material Sciences - APSB 2010, 15.-18.03.2010, Algiers, Algeria

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Publ.-Id: 15059