Transition metal implanted ZnO: Have we obtained a diluted magnetic semiconductor?


Transition metal implanted ZnO: Have we obtained a diluted magnetic semiconductor?

Zhou, S.

Ferromagnetic semiconductor, exhibiting properties of a ferromagnet and a semiconductor simultaneously, is a key material for semiconductor spintronics. To realize diluted ferromagnetic semiconductors, one has to dope semiconductors with transition metal up to several percents. H. Ohno et al. obtained ferromagnetic GaAs:Mn by decreasing the growth temperature in molecular beam epitaxy [1]. In 2000, T. Dietl et al. successfully interpreted the ferromagnetism in GaAs:Mn based on mean-field theory and predicted that p-type wide bandgap semiconductors (ZnO and GaN) can be ferromagnetic above room temperature given the Mn concentration of 5 at.% [2]. This prediction pushed the research on mining for room-temperature ferromagnetic semiconductors as one of the most active topics in the last decade. In this talk, I will present the magnetic and structure properties of transition metal implanted ZnO as well as the opinions from other research groups [3, 4].

1. H. Ohno, et al., Appl. Phys. Lett. 69, 363 (1996).
2. T. Dietl, et al., Science 287, 1019 (2000).
3. K. Potzger, S. Zhou, et al., Appl. Phys. Lett. 88, 052508 (2006).
4. S. Zhou, et al., Phys. Rev. B 77, 035209 (2008).

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    Invited talk at Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 08.11.2010, Shanghai, China

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