Time-resolved photoluminescence from undoped GaAs/Al0.35Ga0.65As quantum wells quenched by pulsed midinfrared radiation
Time-resolved photoluminescence from undoped GaAs/Al0.35Ga0.65As quantum wells quenched by pulsed midinfrared radiation
Zybell, S.; Schneider, H.; Wagner, M.; Winnerl, S.; Köhler, K.; Helm, M.
There is much interest in the development of ultrafast devices with possible applications in optoelectronics. An important goal consists in ultrafast control of luminescence in light-emitting devices; it is therefore interesting to investigate the effect of abrupt changes in the carrier distribution on the luminescence signal. We present an experimental study of the effects of mid-infrared radiation (MIR) on the photoluminescence (PL) from undoped AlGaAs/GaAs quantum wells. Electron-hole pairs, created by weak near-infrared light pulses, were excited in the system while a delayed MIR pulse induces an ultrafast redistribution of free carriers that results in abrupt quenching of the PL with a subsequent PL recovery. The source of the MIR laser pulses was the free-electron laser facility FELBE at the Forschungszentrum Dresden-Rossendorf. In combination with the synchroscan streak camera, collecting the PL from the electron-hole recombination, it turned out to be a great spectroscopic tool for time-resolved measurements. Using a simple fit function we found PL recovery times between 40 and 150 ps depending on the MIR intensity.
Keywords: quantum wells; time-resolved photoluminescence; streak camera; FELBE
Related publications
- DOI: 10.17815/jlsrf-2-58 is cited by this (Id 15192) publication
-
Lecture (Conference)
DPG Frühjahrstagung der Sektion Kondensierte Materie (SKM) 2010, 22.03.2010, Regensburg, Deutschland
Permalink: https://www.hzdr.de/publications/Publ-15192
Publ.-Id: 15192