X-ray reflectivity investigations of Ga+ ion irradiated Pt/Co/Pt films


X-ray reflectivity investigations of Ga+ ion irradiated Pt/Co/Pt films

Kanak, J.; Stobiecki, T.; Powroznik, W.; Mazalski, P.; Sveklo, I.; Maziewski, A.; Liedke, M. O.; Fassbender, J.; Wawro, A.; Baczewski, L. T.

The effects of Ga+ ion implantation in MBE grown Mo20nm/Pt20nm/Co3.3nm/Pt5nm films were investigated by low and high angle x-ray diffraction methods. The reflectivity measurements were used for characterization of changes in layer thickness and interface Pt/Co structure upon 30 keV Ga ion irradiation in a fluence range between 0 and 6e15 ions/cm2. The layer stack thickness was found to decrease with increase of Ga+ fluence. Mixing of Pt and Co at interfaces leads to a change of interface roughness of the top layers. The results were compared with high-fluence ion implantation simulations, of the dynamic changes of thickness and composition of layers, obtained using TRIDYN.

Keywords: TRIDYN; irradiation; Co; Pt; SRT

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Publ.-Id: 15208