Electrical Contacting of Vertical Nanostructures


Electrical Contacting of Vertical Nanostructures

Wieser, M.; Grebing, J.; Höwler, M.; Bernert, K.; Schmidt, B.; Fassbender, J.; Erbe, A.

The aim of this new approach is the contacting and characterization of small vertical nanostructures. Therefore, in contrast to conventional lateral contacting a vertical pillar with a height of about 70 nm and an elliptic size of 100 nm × 150 nm is contacted using a bottom electrode, a via with the same height as the pillar and two top electrodes for tipcontacting of measurement devices. The structuring of the different layers is done using electron beam lithography (EBL). A resist layer is used as an insulator between the bottom and the top electrodes. In the center of the pillar an Al2O3 tunnel barrier will be integrated. The current voltage (IV) characteristics of the system will be investigated and compared to the direct tunneling and the Fowler-Nordheim tunneling model. Using this technique we will characterize the electrical properties of oxides with varying thickness.

Keywords: Electrical contacting vertical nanostructures

  • Poster
    DPG Frühjahrstagung der Sektion Kondensierte Materie (SKM) 2010, 21.-26.03.2010, Regensburg, Deutschland

Permalink: https://www.hzdr.de/publications/Publ-15218
Publ.-Id: 15218