Influence of Proton Elastic Scattering on Soft Error Generation of SRAMs

Influence of Proton Elastic Scattering on Soft Error Generation of SRAMs

Kosmata, M.; Auerhammer, J.; Zier, M.; Schlaphof, F.; Schreiter, F.; von Borany, J.

It is known that protons usually do not deposit sufficient energy in a Static Random Access Memory (SRAM) cell to produce single-event-upsets (SEU) by direct ionization. In this work a model for the influence of elastic scattered protons is presented which explains the experimentally obtained SEU rate for protons at energies well below the Coulomb barrier threshold. A quantitative fit-parameter free calculation of upsets is provided. Experimental results of low energetic proton irradiation of a 32 nm silicon-on-insulator (SOI) SRAM are presented to validate the model.

Keywords: elasic scattering; proton irradiation; SEU; SRAM

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    Conference on Radiation Effects on Components and Systems, 19.-23.09.2011, Sevilla, Spain
  • Contribution to proceedings
    Conference on Radiation Effects on Components and Systems, 19.-23.09.2011, Sevilla, Spain
    Radiation and Its Effects on Components and Systems (RADECS): IEEE, 978-1-4577-0585-4, 186-190
    DOI: 10.1109/RADECS.2011.6131301
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