Control of Rectifying and Resistive Switching Behavior in BiFeO3 Thin Films


Control of Rectifying and Resistive Switching Behavior in BiFeO3 Thin Films

Shuai, Y.; Zhou, S.; Wu, C.; Zhang, W.; Bürger, D.; Slesazeck, S.; Mikolajick, T.; Helm, M.; Schmidt, H.

BiFeO3 thin films have been grown on Pt/Ti/SiO2/Si substrates with pulsed laser deposition using Au as the top electrode. The resistive switching property of the Au/BiFeO3/Pt stack has been significantly improved by carefully tuning the oxygen pressure during the growth, and a large switching ratio of ∼4500 has been achieved. The deposition pressure modifies the concentration of oxygen vacancies and the rectifying behavior of the Au/BiFeO3 junction, and consequently influences the resistive switching behavior of the whole stack. The switching takes place homogeneously over the entire electrode, and shows a long-term retention.

Keywords: resistive switching; BiFeO3; nonvolatile

Permalink: https://www.hzdr.de/publications/Publ-15951
Publ.-Id: 15951