Dwell-time effects in focused ion beam synthesis of cobalt disilicide: reflectivity measurements


Dwell-time effects in focused ion beam synthesis of cobalt disilicide: reflectivity measurements

Hausmann, S.; Bischoff, L.; Voelskow, M.; Teichert, J.; Möller, W.; Fuhrmann, H.

Cobalt disilicide layers were produced by 70 keV Co2+ focused ion beam implantation into Si(111) at temperatures of about 400°C and subsequent annealing. The CoSi2 layer quality depends on pixel dwell-time and subtrate temperature. Only properly chosen parameters result in a continuous layer. The dwell-time (1-250 µs) and substrate temperature (355-400°C) dependence was investigated by scanning electron microscopy, reflectivity measurements and Rutherford backscattering spectroscopy/channeling. The results show that the irradiation damage increases with dwell-time and decreases with temperature, indicating an interplay between the damage creation rate and the dynamic annealing rate. Already after implantation of less than a tenth part of the dose required for continuous layer formation, the quality of the resulting CoSi2 layer is predertermined.

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Publ.-Id: 1605