n-InAs/p-Si heterojunction with type-II band alignment


n-InAs/p-Si heterojunction with type-II band alignment

Prucnal, S.; Liedke, M. O.; Schmidt, H.-M.; Baumgart, C.; Shalimov, A.; Reuther, H.; Mücklich, A.; Helm, M.; Skorupa, W.

Crystalline InAs quantum dots (QDs) were successfully synthesized in silicon by hot ion implantation and millisecond flash lamp annealing (FLA). The crystallinity and shape of the InAs quantum dots were proven by high resolution transmission electron microscopy, -Raman spectroscopy and X-ray diffraction (XRD). Selective etching was used to form InAs/Si heterowires. The Kelvin Probe Force Microscope (KPFM) measurements prove the type-II band alignment of n-type InAs QD on p-type silicon nanowires. The Fermi level at the position of the InAs QD lies deep inside the conduction band region of InAs. The measured lateral KPFM bias variation ranges between 0 mV at the edge of the InAs QD and 100 mV at the center of the QD. The lattice parameter and the size of the QDs increases from 6.051 to 6.055 Ǻ and from 40 up to 50 nm with annealing temperature increasing from 1100 up to 1200 oC, respectively. By the proper choice of the preparation conditions such as ion fluence, annealing time and temperature we can synthesize and fully control the size and shape of InAs quantum structures in silicon. The main advantage of this method is its integration with large-scale silicon technology, which allows applying it for Si-based optoelectronic devices.

Keywords: InAs; silicon; heterojunction; flash lamp annealing; ion implantation

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Publ.-Id: 16318