III-V/Si heterostructures fully integrated into silicon

Integration of III-V semiconductors with a silicon technology is crucial for the devices performance. In this paper we present investigations of the microstructural, optical and electrical properties of III-V quantum dots (InAs, GaAs, InP and GaP) formed in silicon. The III-V QDs were obtained by means of sequential ion implantation and flash lamp annealing (FLA). Conventional selective etching was used to form the n-III-V/p-Si heterojunction. In case of InAs/Si heterostructures, the current-voltage measurement confirms the heterojunction diode formation with the ideality factor of n=4.6. Kelvin Probe Force Microscopy measurements indicate a type-II band alignment of n-type InAs NPs on p-type silicon. The main advantage of our method is its integration with large-scale silicon technology, which also allows applying it for Si-based electronic devices.