Ion implantation and short-time annealing for spintronics


Ion implantation and short-time annealing for spintronics

Zhou, S.

Doping of semiconductors is an essential issue for device fabrication. Ion implantation followed by annealing is a well-established method to dope Si and Ge. This approach has been maturely integrated with the IC industry production line. Nowadays, the demands for functional spintronics/photovoltaic materials require a supersaturated doping of semiconductors. For instance, regarding spintronics applications one needs to prepare magnetic semiconductors which are doped with up to 5-10% Mn. As a non-equilibrium process, ion implantation can introduce enough dopants as required. However, the activation of dopants remains challenging due to the clustering of implanted ions during post-annealing. The solubility limit is a fundamental barrier for dopants incorporated into a specific semiconductor. On the other hand, one notes that the solubility limit in the liquid phase is generally much larger than that in the solid phase. Short-time annealing in the millisecond or nanosecond regime allows the epitaxial growth from a liquid phase. Shallow dopants in Si and Ge, mainly the elements from the III or V columns of the periodic table, have been successfully built in by ion implantation and pulsed laser annealing [1]. The carrier concentration can reach values as high as 1021 cm-3. Such a platform combining ion implantation and short-time annealing has been established at Helmholtz-Zentrum Dresden-Rossendorf (HZDR) [2]. In this contribution, we will give an overview of the platform and particularly of its application in the preparation of Mn doped Ge [3, 4].

Reference:

[1] C. W. White, et al., J. Appl. Phys. 51, 738 (1980).
[2] W. Skorupa, et al., J. Electrochemical Soc. 152, G436 (2005).
[3] S. Zhou, et al., Phys. Rev. 81, 165204 (2010).
[4] S. Zhou, et al., Appl. Phys. Lett. 96, 202105 (2010).

Related publications

  • Invited lecture (Conferences)
    Seminar at Univ. Jena, 30.06.2011, Jena, Germany
  • Lecture (Conference)
    Workshop „Ionen- und Positronenstrahlen“, 04.-05.07.2011, München, Germany

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