Effect of the processing of embedded Ge nanocrystals upon the Si-SiO2 interface state and border trap density


Effect of the processing of embedded Ge nanocrystals upon the Si-SiO2 interface state and border trap density

Beyer, R.; Burghardt, H.; von Borany, J.

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    14th European Conference on Applications of Surface and Interface Analysis (ECASIA'11), 05.09.2011, Cardiff, Wales

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Publ.-Id: 16697