Relaxation of Radiation Damages


Relaxation of Radiation Damages

Schmidt, B.; Eremin, V.; Ivanov, A.; Strokan, N.; Verbitskaya, E.; Li, Z.

The behavior of radiation-induced carbon-related defects in high-resistivity silicon detectors has been investigated. The defects were introduced by alpha-praticle irradiation and investigated by deep-level transient spectroscopy. An unusual defect behavior consists in low-temperature anealing, including self-annealing at room temperatur, of the interstitial carbon Ci with a simultaneous increase of the Ci-Oi-complex concentration. The kinetic parameters of the process have been determined from the increase of the Ci-center concentration versus time. Two annealing velocities have been observed, which arise from different heat treatments during the detector fabrication process.

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Publ.-Id: 168