Superconducting Gallium implanted Germanium


Superconducting Gallium implanted Germanium

Fiedler, J.; Heera, V.

Superconductivity in doped semiconductors is of increasing interest in both, fundamental research and applied physics. We report on superconducting Ge layers fabricated by Ga ion implantation and subse-quent flash lamp annealing. A brief introduction to alternative preparation methods and the physics of superconducting semiconductors is given, too. The microstructure of and the electrical transport in the Ga doped Ge layers are investigated in detail. Finally, it is demonstrated that increasing the Ga concentration and the thermal budget of annealing leads to Ga segregation. In this case superconducting properties similar to that of amorphous Ga films are obtained.

Keywords: carrier density; clusters; cover layer; diffusion; dopant; flash lamp annealing; gallium; germanium; Hall; implantation; metal-insulator-transition; nanocrystalline; oxygen; rapid thermal annealing; resistance; sem-iconductor; superconducting; surface

Related publications

  • Book chapter
    Heidemarie Schmidt, Wolfgang Skorupa: Subsecond Annealing of Advanced Materials: Annealing by Lasers, Flash Lamps and Swift Heavy Ions (Springer Series in Materials Science), Switzerland: Springer, 2014, 978-3-319-03130-9, 57-78
    DOI: 10.1007/978-3-319-03131-6_4

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