Ga(1−x)Mn(x)N epitaxial films with high magnetization


Ga(1−x)Mn(x)N epitaxial films with high magnetization

Kunert, G.; Dobkowska, S.; Li, T.; Reuther, H.; Kruse, C.; Figge, S.; Jakiela, R.; Bonanni, A.; Grenzer, J.; von Borany, J.; Stefanowicz, W.; Sawicki, M.; Dietel, T.; Hommel, D.

We report on the fabrication of pseudomorphic wurtzite Gax Mnx N grown on GaN with Mn concentrations up to 10 % using molecular beam epitaxy. According to Rutherford backscattering the Mn ions are mainly at the Ga-substitutional positions, and they are homogeneously distributed according to depth-resolved Auger-electron spectroscopy and secondary-ion mass-spectroscopy measurements. A random Mn distribution is indicated by transmission electron microscopy, no Mn-rich clusters are present for optimized growth conditions. A linear increase of the c-lattice parameter with increasing Mn concentration is found using x-ray diffraction. The ferromagnetic behavior is confirmed by superconducting quantum-interference measurements showing saturation magnetizations of up to 150 emu/cm3 .

Keywords: GaN; GaMnN; DMS

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Permalink: https://www.hzdr.de/publications/Publ-17316
Publ.-Id: 17316