Virtual Institute MEMRIOX - Memory Effects in Resistive Ion-beam Modified Oxides


Virtual Institute MEMRIOX - Memory Effects in Resistive Ion-beam Modified Oxides

Gemming, S.; Dittmann, R.; Meyer, D. C.; Mikolajick, T.; Ronning, C.; Schmidt, H.; Waser, R.; Spaldin, N. A.; Basov, D.

The Virtual Institute (VI) „Memriox“ establishes a joint research initiative in the field of ion-tailored oxide-based memristive materials, to be pursued within a novel and unique combination of core competences from the Helmholtz centers Dresden-Rossendorf and Jülich and their university partners in Aachen, Dresden, Freiberg, and Jena. A nanoscale memristive switch may prove the ultimate future non-volatile memory and logic cell with a resistance set directly by electric currents. Thus, the nanoscale memristor has matured to a key player in strategies combining the virtues of the “More Moore” and “More than Moore“ concepts to drive the development of both miniature and functionalized electronic components for a resource-efficient “green“ computing.
Scientifically, the VI aims at stepping beyond the established layer-by-layer control of intrinsic defects during the synthesis of memristive homojunctions. For that purpose, the VI will employ the broad range of ion-beam techniques (HZDR and FSU Jena competence) to induce functionalized one- and two-dimensionally extended memristive nanoregions with high spatial precision. Nano-scale electronic and optical properties and functiona¬lities will be investigated at the partner institutions at the FZJ and the universities in Aachen, Freiberg, and Jena. Applica-bility will be assessed at the NaMlab facility of the TU Dresden. Associated partners at the U.C. San Diego (U.S.A.) and the ETH Zürich (Switzerland) extend the expertise on spectroscopy and simulation.
This combination of the VI partners’ profound, long-term expertise in complementary high-level synthesis, characterization and analysis techniques is unique in the German research area. It provides the ideal framework to explore the spatial limits of memristive elements and their environment hence the VI faces the challenges of the ‘More Moore’ concept, which is still less prominent in basic memristor research. The VI will thus make a significant, qualitatively and quantitatively distinct contribution to cutting-edge science, which aims at quantifying defect-related effects on memristive behavior according to the ‚More Than Moore‘ concept.

Keywords: memristor; memristive; oxide; titanate; ferrite; multiferroic

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Publ.-Id: 17347