Advanced thermal processing for advanced electronics and photovoltaics


Advanced thermal processing for advanced electronics and photovoltaics

Skorupa, W.

This talk reviews the advances that subsecond thermal processing using flash lamps and lasers brings to the processing of the most advanced semiconductor materials, thus enabling the fabrication of novel electronic structures and materials. It will be demonstrated how such developments can translate into important practical applications leading to a wide range of technological benefits.
Recently we could demonstrate that germanium and silicon exhibit superconductivity at ambient pressure. Regarding photovoltaic applications, we dealt with two aspects: (i) the ion beam doping and thermal processing of so-called dirty silicon demonstrating a distinct improvement of the minority carrier diffusion length compared to RTP and furnace treatments, and (ii), for the annealing of CIGS layers millisecond annealing leads to better optical output and lower degradation
Whereas all these examples base on solid phase processing the more sophisticated approach regards on working with the liquid phase at the surface of solid substrates. A very recent example is the controlled formation of III-V nanocrystals (InAs, GaAs) in silicon after ion beam synthesis (NanoLett. 11, 2814 (2011)). Moreover a new approach of measuring temperatures in the subsecond time range will be mentioned as well as the interesting field of large area-low cost electronics.

Related publications

  • Invited lecture (Conferences)
    IX-th International Conference on Ion Implantation and other Applications of Ions and Electrons, 25.-28.06.2012, Kazimierz Dolny, Poland

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Publ.-Id: 17398