1550 nm ErAs:In(Al)GaAs Large Area Photoconductive Emitters


1550 nm ErAs:In(Al)GaAs Large Area Photoconductive Emitters

Preu, S.; Mittendorff, M.; Lu, H.; Weber, H. B.; Winnerl, S.; Gossard, A. C.

We report on high power Terahertz emission from ErAs-enhanced InAlAs-InGaAs superlattices for operation at 1550 nm. ErAs clusters act as ecient recombination centers. The optical power is distributed among a large, microstructured area in order to reduce the local optical intensity. A THz field strength of 0.7 V/cm (1 V/cm peak-to-peak) at 100 mW average optical power has been obtained, with emission up to about 4 THz in air, limited by the detection crystal used in the system.

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Publ.-Id: 17533