The effect of chemical etching on poly (methyl methacrylate) irradiated with slow highly charged ions


The effect of chemical etching on poly (methyl methacrylate) irradiated with slow highly charged ions

Ritter, R.; Wilhelm, R. A.; Ginzel, R.; Schadauer, P.; Heller, R.; Rupp, W.; López-Urrutia, J. R. C.; Facsko, S.; Aumayr, F.

We have recently demonstrated that individual slow highly charged ions are able to produce nanosized pits on poly (methyl methacrylate) surfaces as a result of direct ablation due to the deposition of their high potential energy, if this energy exceeds a critical minimum value. By exposing irradiated samples to a suitable etchant, such pits can be revealed even below this potential energy threshold as latent damage zones are removed. Existing pits, after contact with the etchant grow both in diameter and depth with different etching dynamics for both dimensions. Systematic studies on the response of irradiated samples to a chemical developer are presented.

Keywords: highly charged ions; PMMA; nano-structuring; atomic force microscopy; chemical etching

Related publications

  • Poster
    16th International Conference Physics of Highly Charged Ions, 02.-07.09.2012, Heidelberg, Deutschland
  • Physica Scripta T156(2013), 014065
    DOI: 10.1088/0031-8949/2013/T156/014065

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Publ.-Id: 17994