Electronic Griffiths Phase in the Te-Doped Semiconductor FeSb2


Electronic Griffiths Phase in the Te-Doped Semiconductor FeSb2

Hu, R.; Wang, K.; Ryu, H.; Lei, H.; Choi, E. S.; Uhlarz, M.; Wosnitza, J.; Petrovic, C.

We report on the emergence of an electronic Griffiths phase in the doped semiconductor FeSb2, predicted for disordered insulators with random localized moments in the vicinity of a metal-insulator transition. Magnetic, transport, and thermodynamic measurements of Fe(Sb1-xTex)2 single crystals show signatures of disorder-induced non-Fermi liquid behavior and a Wilson ratio expected for strong electronic correlations. The electronic Griffiths phase states are found on the metallic boundary between the insulating state (x = 0) and a long-range albeit weak magnetic order (x ≥ 0.075).

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Publ.-Id: 18175