Scanning Tunnelling Spectroscopy of FIB-induced Local Phase Changes in Tetrahedral Amorphous-Carbon

Ion irradiation of tetrahedral amorphous-carbon leads to both an ion implantation and a local phase change of the carbon. The latter is equivalent to an increase of the carbon sp2/sp3 bond ratio. It is caused by the deposition of the ion energy and leads to an increased electrical conductivity. We perform spatially resolved scanning tunneling spectroscopy in order to investigate the impact of different ion species (Ga, Si, Ge, Au). A direct contribution of the implanted metal will be carefully considered.