5MeV Proton and 15MeV Electron Radiation Effects Study on 4H-SiC nMOSFET Electrical Parameters


5MeV Proton and 15MeV Electron Radiation Effects Study on 4H-SiC nMOSFET Electrical Parameters

Alexandru, M.; Florentin, M.; Constant, A.; Schmidt, B.; Michel, P.; Godignon, P.

The impact of proton and electron irradiation on the electrical parameters of 4H-SiC nMOSFETs has been
investigated by using time bias stress instability method. This study has allowed observing the effect of holes trapped in the
oxide together with the generated interface traps. Improvements of important electrical parameters, such as the threshold voltage,
the effective mobility and the maximum drain current were observed. These amendments could be connected with the
Nitrogen and residual Hydrogen atoms diffusion from the SiO2/SiC interface toward the epilayer during irradiation. These
atoms are likely to create other bonds by occupying the Silicon and Carbon’s dangling bond vacancies. This way, the number of
passivated Carbon atoms is increasing, hence the interface quality getting improved.

Keywords: Charge Trapping; Electron Irradiation; Mobility; Proton irradiation; SiC MOSFET; SiO2/SiC Interface; Time Bias Stress Instability; Threshold Voltage Shift

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Publ.-Id: 19145