Low Energy Proton Radiation Impact on 4H-SiC nMOSFET Electrical Parameters


Low Energy Proton Radiation Impact on 4H-SiC nMOSFET Electrical Parameters

Florentin, M.; Alexandru, M.; Constant, A.; Schmidt, B.; Godignon, P.

In this work, the effect of 180 keV proton radiation in lateral 4H-SiC nMOSFETs with rapid thermally processed (RTP) gate oxides is investigated before and after radiation. Comparison with non-irradiated (NI) samples allows the study of hole trap effects in the oxide and of generated interface traps. It has been observed that for the two lower fluences, the threshold voltage (VTH) shifts toward lower values, reaching a minimum for a fluence of 5x1012 cm-2. The effective channel mobility (µEFF) and the maximum drain current (IDSAT_MAX) reach maximum values for 5x1012 cm-2 as well; the µEFF gets 6 times superior, while the IDSAT_MAX doubles in accordance with the NI sample values.

Keywords: SiC; low energy proton irradiation; threshold voltage shift; channel mobility

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Publ.-Id: 19146