Networks of silicon nanowires: a large-scale atomistic electronic structure analysis


Networks of silicon nanowires: a large-scale atomistic electronic structure analysis

Keles, U.; Liedke, B.; Heinig, K.-H.; Bulutay, C.

Networks of silicon nanowires possess intriguing electronic properties surpassing the predictions based on quantum confinement of individual nanowires. Employing large-scale atomistic pseudopotential computations, as yet unexplored branched nanostructures are investigated in the subsystem level, as well as in full assembly. The end product is a simple but versatile expression for the bandgap and band edge alignments of multiply-crossing Si nanowires for various diameter, number of crossings, and wire orientations. Further progress along this line can potentially topple the bottom-up approach for Si nanowire networks to a top-down design by starting with functionality and leading to an enabling structure.

Keywords: nanowire networks; branched nanowires; nanoscale silicon; electronic structure

Permalink: https://www.hzdr.de/publications/Publ-19330
Publ.-Id: 19330