III-V/Si on silicon-on-insulator platform for hybrid nanoelectronics
III-V/Si on silicon-on-insulator platform for hybrid nanoelectronics
Prucnal, S.; Zhou, S.; Ou, X.; Facsko, S.; Liedke, M. O.; Bregolin, F.; Liedke, B.; Grebing, J.; Fritzsche, M.; Hübner, R.; Mücklich, A.; Rebohle, L.; Helm, M.; Turek, M.; Drozdziel, A.; Skorupa, W.
The unique properties of SOI wafers enable the integration of heterogeneous materials with distinct functionalities in different layers. In particular, III-V compound semiconductors are very attractive for low-noise and high-speed electronic and photonic components integrated on a single chip. We have developed a CMOS compatible and fully integrated solution for the integration of III-V compound semiconductors with silicon technology for optoelectronic applications. InAs compound semiconductor nanostructures are synthesized in SOI wafers using the combined ion beam implantation and millisecond liquid-phase epitaxial growth. Optoelectronic and microstructural investigations carried out on implanted, annealed and selectively etched samples confirm the formation of high-quality III-V compound semiconductor nanostructures.
Keywords: Ion Implantation; Flash Lamp Annealing; InAs; SOI; heterojunction
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Journal of Applied Physics 115(2014), 074306
Online First (2014) DOI: 10.1063/1.4865875
Cited 12 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-20090
Publ.-Id: 20090