Investigation of the effective mass in GaAsN


Investigation of the effective mass in GaAsN

Eßer, F.; Drachenko, O.; Schneider, H.; Patanè, A.; Hopkinson, M.; Helm, M.

As a member of diluted nitrides, GaAsN is a highly interesting material system for many application purposes such as LEDs, lasers, solar cells, and infrared photodetectors because of the tuning possibility of these devices by the variation of the nitrogen content. For an accurate description of this material system, a profound knowledge of the band structure and in particular the effective mass (EM) is crucial. Because of the inconsistency of previous results, which can be traced down to the particular investigation method, we apply several methods on one sample series of GaAsN containing samples with 0.1 - 1 percent of nitrogen. Cyclotron resonance spectroscopy, beeing the most direct method, reveals that the EM is not signicantly affected by the nitrogen doping. Photoluminescence, on the other hand, stems from several transitions, which are not resolved spectrally, but identified in time-resolved measurements. We discuss the different behaviour of the involved transitions in magnetic fields up to 7 T (static) and 41 T (pulsed).

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    DPG-Frühjahrstagung der Sektion Kondensierte Materie, 30.03.-04.04.2014, Dresden, Deutschland

Permalink: https://www.hzdr.de/publications/Publ-20262
Publ.-Id: 20262