Ain films obtained by a broad energy Nitrogen ion Implantation and rapid thermal anealing process
Ain films obtained by a broad energy Nitrogen ion Implantation and rapid thermal anealing process
Grigorov, K. G.; Nedkov, I.; Beshkov, G.; Angelov, C.; Maciel, H. S.; Matz, W.; Groetzchel, R.; Velchev, N.
The paper describes structural, morphological and electrical investigations of thin AlN films. The films were obtained by broad energy range ion bombardment (BERIB) of aluminium, with doses ranging from 1.5 × 1017 cm-2 to 6 × 1017 cm-2. This technique, to our knowledge, has not been described previously in the literature. The ion implantation was carried out with two species - nitrogen atoms with energies from 50, 30, and 20 keV and nitrogen ions with energies of 50 and 30 keV. These energy values were chosen in order to ensure a continuous and wide nitride layer, at least of 150 nm thick.
Keywords: Aluminium nitrides; RTA; PECVD; Ion implantation and characterization
Related publications
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 20375) publication
- Journal of Optoelectronics and Advanced Materials 7(2005)1, 381-384
Permalink: https://www.hzdr.de/publications/Publ-20375
Publ.-Id: 20375