Ain films obtained by a broad energy Nitrogen ion Implantation and rapid thermal anealing process


Ain films obtained by a broad energy Nitrogen ion Implantation and rapid thermal anealing process

Grigorov, K. G.; Nedkov, I.; Beshkov, G.; Angelov, C.; Maciel, H. S.; Matz, W.; Groetzchel, R.; Velchev, N.

The paper describes structural, morphological and electrical investigations of thin AlN films. The films were obtained by broad energy range ion bombardment (BERIB) of aluminium, with doses ranging from 1.5 × 1017 cm-2 to 6 × 1017 cm-2. This technique, to our knowledge, has not been described previously in the literature. The ion implantation was carried out with two species - nitrogen atoms with energies from 50, 30, and 20 keV and nitrogen ions with energies of 50 and 30 keV. These energy values were chosen in order to ensure a continuous and wide nitride layer, at least of 150 nm thick.

Keywords: Aluminium nitrides; RTA; PECVD; Ion implantation and characterization

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Publ.-Id: 20375